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  DOI Prefix   10.20431


 

International Journal of Advanced Research in Physical Science
Volume 6, Issue 4, 2019, Page No: 1-5

Electronic and Magnetic Properties of Insulating Ferromagnetic Semiconductor (Al,Fe) Sb from First-Principles Calculations

L. Hua

Nanjing Normal University Taizhou College, Taizhou 225300, People's Republic of China

Citation : L. Hua, Electronic and Magnetic Properties of Insulating Ferromagnetic Semiconductor (Al,Fe) Sb from First-Principles Calculations International Journal of Advanced Research in Physical Science 2019, 6(4) : 1-5.

Introduction

We have investigated the electronic structure and magnetic properties of Fe-doped AlSb using density functional theory within the generalized gradient approximation (GGA)+U schemes. We have shown that the ground state magnetic structure of Fe-doped AlSb is antiferromagnetic. AlSbis the most plausible acceptor among several candidates for p-type conduction and the bound magnetic polarons (BMP) mechanism may be responsible for the origin of the (Al,Fe) Sb ferromagnetism.


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